2011-2014 - Nanotechnology Laboratory Engineer.
February 2015-September 2015 - Sales Manager, Distrilab LLP.
November 2015-March 2016 - Research Fellow, Structural Analysis Laboratory, Nazarbayev University.
September 2016-January 2017 - Senior Lecturer, Almaty University of Power Engineering and Telecommunications.
January 2017-June 2019 - Senior Lecturer, Kazakh-British Technical University.
June 2019-June 2021 - Assistant Professor, Satbayev University.
August 2021–August 2025: Assistant Professor at Astana IT University
August 2025–present: Associate Professor at MITU
2005 - 2009 . .
2009 - 2011 . .
2011 - 2014 . .
2019 - 2021 . .
1. Nussupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Beisembetov I.K., Kenzhaliev B.K., Akhmetov T.K., and Seitov B.Zh. Structure and Composition of Silicon Carbide Films Synthesized by Ion Implantation // Physics of the Solid State. - 2014. - Vol. 56, No. 11. - P. 2307–2321. (Impact-factor 2013 – 0.782. SCOPUS, Thomson Reuters).
2. Beisembetov I.K., Nussupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Synthesis of SiC thin films on Si substrates by ion-beam sputtering // Surface. X-ray, synchrotron, and neutron studies. 2015. (Impact factor 2013 – 0.359. SCOPUS, Thomson Reuters).
3. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K., Seitov B.Zh. Infrared spectroscopy of ion-synthesized silicon carbide thin films // Bulletin of the Nizhny Novgorod State University. 2013. No. 4(1). pp. 42-55.
4. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Formation and structure of a nanosized layer of silicon carbide on silicon during implantation of high doses of carbon ions // Nanomaterials and nanostructures - XXI century. – Moscow: Radio Engineering Publishing House. – 2013. – Vol. 4, No. 2. – Pp. 36−42.
5. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Ivlev R. Structure of nanosized carbon and silicon carbide films on silicon obtained by magnetron and ion-beam sputtering of a target // Nanomaterials and nanostructures - XXI century. – Moscow: Radio Engineering Publishing House. – 2012. – Vol. 3, No. 4. – Pp. 30−35.
6. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Infrared spectroscopy and X-ray reflectometry of SiC thin films on Si // Reports of the NAS RK. − 2013. − No. 6.
7. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Distribution of carbon atoms in silicon after high-dose implantation of C+ ions into Si // Bulletin of the NAS RK. Physico-Mathematical Series. − 2013. − No. 6.
8. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Ionic synthesis and properties of silicon carbide and carbon films // Vestnik KazNU im. Al-Farabi. Physical series. – 2013. – No. 3(46). – pp. 27–36.
9. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Sagyndykov A.B., Akhmetov T.K. IR spectroscopy of silicon layers implanted with carbon ions // Bulletin of KBTU. − Almaty. − 2011. − No. 2. − P. 24–28.
10. Beisembetov I.K., Beysenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. Ion synthesis of silicon carbide thin films. // Abstracts of the IV All-Russian Conference and School of Young Scientists and Specialists "Physical and Physicochemical Foundations of Ion Implantation". - Novosibirsk, 2012. - P. 61.
11. Nusupov K.Kh., Beysenkhanov N.B., Zharikov S.K., Beysembetov I.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Formation of SiC thin films on Si substrates by ion-beam sputtering // Collection of abstracts of the X conference on current problems of physics, materials science, technology and diagnostics of silicon, nanometer structures based on it "Silicon - 2014. - Irkutsk, 2014. – P. 158.
12. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. Ion synthesis and properties of silicon carbide and carbon films. // Abstracts of the IV All-Russian Conference and School of Young Scientists and Specialists "Physical and Physicochemical Foundations of Ion Implantation". – Novosibirsk, 2012. – P. 117.
13. Beisembetov I.K., Nusupov K.Kh., Zharikov S.K., Kenzhaliev B.K., Beisenkhanov D.N., Dzharas A.K., Akhmetov T.K., Seitov B.Zh. Study of silicon carbide films synthesized by ion implantation // Proceedings of the VI International Scientific and Practical Conference "Problems of Innovative Development of the Oil and Gas Industry" / KBTU. – Almaty, 2014.
14. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Mit’ K.A., Akhmetov T.K., Seitov B.Zh. Synthesis of SiC and C thin films on Si substrates by magnetron and ion-beam sputtering. // Proceedings of the 5th International Scientific and Practical Conference “Problems of Innovative Development of the Oil and Gas Industry” / KBTU. – Almaty, 2013. − Pp. 192–198.
15. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. IR study of high-temperature instability of solid SiC films synthesized ion implantation // Proceedings of the 4th International Scientific and Practical Conference "Problems of Innovative Development of the Oil and Gas Industry" / KBTU. – Almaty, 2012.
16 A.M. Meirmanova*, PhD, Senior Lecturer1 T.K. Akhmetov, PhD, Assistant Professor1 K.A. Akylbekov, PhD Student2 ANALYSIS OF THE DIGITAL MARKET OF KAZAKHSTAN USING TIME SERIES ANALYSIS. Kazakh Economics, 2024, No. 1 (54) 286 DOI 10.52260/2304-7216.2024.1(54).35 UDC 33